© Global Journal Of Pure And Applied Sciences . 2003. Vol. 9 No. 2
Publisher: Bachudo Science Co. Ltd
Modelling and Characterisation of Transistors
S. F. Akande, A. M. Batu, B. J. Kwaha
KEYWORDS: Modelling, Bipolar, Junction, Transistor
ABSTRACT:Models and characterisation of active devices that control the flow of energy operatihg within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of the device at the terminals were measured and analysed. The parameters determined could be employed to evaluate input and output impedances, current, voltage and power gains of the device at appropriate operating points. The measured parametess compare favourably with published manufacturers' data to within 5%.
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